device, based on gate-all-around (GAA) FinFET technology. In 2011, Rice University researchers Masoud Rostami and Kartik Mohanram demonstrated that FinFETs can have two electrically independent gates, which gives circuit designers more flexibility to design with efficient, low-power gates.

In 2020, Chenming Hu received the IEEE Medal of Honor award for his development of the FinFET, which the Institute of Electrical and Electronics Engineers