<?xml version="1.0" encoding='utf-8'?>
<!DOCTYPE wml PUBLIC "-//WAPFORUM//DTD WML 1.1//EN" "http://www.wapforum.org/DTD/wml_1.1.xml">
<wml>
<card id="card1" title="Insulated-gate bipolar transistor - Page 13 - Wikipedia">
<p>
<a accesskey="1" href="page.php?w=insulated-gate_bipolar_transistor&amp;p=12">1.Previous</a><br />
<a accesskey="3" href="page.php?w=insulated-gate_bipolar_transistor&amp;p=14">3.Next</a>
</p>
<p>(GTOs). This excellent feature of the IGBT had suddenly emerged when the non-latch-up IGBT was established in 1984 by solving the problem of so-called "latch-up", which is the main cause of device destruction or device failure. Before that, the developed devices were very weak and were easily destroyed by "latch-up".</p>

<p><big>Practical devices</big></p>
<p>Practical devices capable of operating over an extended current range were first reported by <a href="page.php?w=B._Jayant_Baliga">B. Jayant Baliga</a> et al. in 1982. The first experimental demonstration</p><p>
<a accesskey="1" href="page.php?w=insulated-gate_bipolar_transistor&amp;p=12">1.Previous</a><br />
<a accesskey="3" href="page.php?w=insulated-gate_bipolar_transistor&amp;p=14">3.Next</a>
</p>

<do type="prev" label="Search">
        <go href="search.wml"/>
</do>

</card>
</wml>
