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and quantum well layers for ultraviolet LEDs, but these devices have not yet reached the level of efficiency and technological maturity of InGaN/GaN blue/green devices. If unalloyed GaN is used in this case to form the active quantum well layers, the device emits near-ultraviolet light with a peak wavelength centered around 365 nm. Green LEDs manufactured from the InGaN/GaN system are far more efficient and brighter than green LEDs produced with non-nitride material

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