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Si/SiO₂ stack and published their results in 1960. Following this research at Bell Labs, Mohamed Atalla and Dawon Kahng proposed a silicon MOS transistor in 1959 and successfully demonstrated a working MOS device with their Bell Labs team in 1960. The team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D'Asaro, and J. R. Ligenza who developed the diffusion processes, and H.

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