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also common. In order to create devices on polysilicon over large-areas, however, a crystal grain size smaller than the device feature size is needed for homogeneity of the devices. Another method to produce poly-Si at low temperatures is metal-induced crystallization where an amorphous-Si thin film can be crystallized at temperatures as low as 150 °C if annealed while in contact of another metal film such as aluminium, gold,

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