nitrogen. Homoepitaxial and heteroepitaxial SiC layers can be grown employing both gas and liquid phase approaches.

To form complexly shaped SiC, preceramic polymers can be used as precursors which form the ceramic product through pyrolysis at temperatures in the range 1,000-1,100 °C. Precursor materials to obtain silicon carbide in such a manner include polycarbosilanes, poly(methylsilyne) and polysilazanes.