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but with bipolar transistors rather than MOSFETs.

In the early 1990s, American companies began developing practical MOS active pixel sensors. In 1991, Texas Instruments developed the bulk CMD (BCMD) sensor, which was fabricated at the company's Japanese branch and had a vertical APS structure similar to the Olympus CMD sensor, but was more complex and used PMOS rather than NMOS transistors.

CMOS sensor

By the late 1980s to

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