a CAS latency of 13 clock cycles, comparable to the DDR2 to DDR3 transition. Additionally, DDR4 features a longer burst length of 16, higher capacity support, and improved signal integrity with tighter pin spacing (0.85 mm vs. 1.0 mm), slightly increased height (31.25 mm vs. 30.35 mm), and increased thickness (1.2 mm vs. 1.0 mm) for better signal routing and performance.

Internal banks are increased to 16 (4 bank select bits), with up to 8 ranks per