mass-producing NAND chips with TLC technology in 2010.

Charge trap flash

Charge trap flash (CTF) technology replaces the polysilicon floating gate, which is sandwiched between a blocking gate oxide above and a tunneling oxide below it, with an electrically insulating silicon nitride layer; the silicon nitride layer traps electrons. In theory, CTF is less prone to electron leakage, providing improved data retention.

Because CTF replaces the polysilicon with an electrically insulating

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