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in September 2002. Intel announced "triple-gate transistors" which maximize "transistor switching performance and decreases power-wasting leakage". A year later, in September 2003, AMD announced that it was working on similar technology at the International Conference on Solid State Devices and Materials. No further announcements of this technology were made until Intel's announcement in May 2011, although it was stated at IDF 2011, that they demonstrated a working SRAM

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