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<p>than either MRAM or FeRAM. The areal density of these parts appears to be even higher than modern flash devices, the lower overall storage being due to the lack of multi-bit encoding. This announcement was followed by one from <a href="page.php?w=Intel">Intel</a> and <a href="page.php?w=STMicroelectronics">STMicroelectronics</a>, who demonstrated their own PRAM devices at the 2006 <a href="page.php?w=Intel_Developer_Forum">Intel Developer Forum</a> in October.</p>

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