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?-Ga₂O₃ is the most thermodynamically stable phase at standard temperature and pressure while ?-Ga₂O₃ is the most stable polymorph under high pressures.

* ?-Ga₂O₃ epitaxial thin films can be deposited heteroepitaxially on substrates such as sapphire, GaN, SiC, and Si, as well as homoepitaxially. For example, ALD

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