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or molecular oxygen as the oxidant; it is consequently called either wet or dry oxidation. The reaction is one of the following:

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:

The oxidizing ambient may also contain several percent of hydrochloric acid (HCl). The chlorine neutralizes metal ions that may occur in the oxide.

Thermal oxide incorporates silicon consumed from the substrate and oxygen supplied from the ambient. Thus, it grows both down into the wafer and up out of it. For

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