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in which a buried oxide is formed below a thin semiconductor layer. If the channel region between the gate dielectric and the buried oxide region is very thin, the channel is referred to as an ultrathin channel region with the source and drain regions formed on either side in or above the thin semiconductor layer. Other semiconductor materials may be employed. When the source and drain regions are formed above the channel in whole or in part, they are referred to as raised source/drain regions.

Modes of operation

The operation

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