1.Previous
3.Next

this makes the transistor larger and thus both slower and more expensive. Some vendors use this technique in selected portions of an IC by constructing low leakage logic from large transistors that some processes provide for analog circuits. Some processes place the transistors above the surface of the silicon, in "fin fets", but these processes have more steps, so are more expensive. Special transistor doping materials (e.g. hafnium) can also reduce leakage, but this adds steps to the processing, making it more expensive. Some semiconductors

1.Previous
3.Next