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by Philco in 1953 had a much higher frequency response than the original point-contact transistors. The transistor was made of a thin crystal of germanium, which was electrolytically etched with pits on either side forming a very thin base region, on the order of 5 micrometers. Philco's process for etching was United States patent number 2,885,571. Philco surface-barrier transistors were used in TX-0, and in early models of what would become the DEC PDP product

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