InP substrates.Single crystal material in thin-film form can be grown by epitaxy from the liquid-phase (LPE), vapour-phase (VPE), by molecular beam epitaxy (MBE), and by metalorganic chemical vapour deposition (MO-CVD). Today, most commercial devices are produced by MO-CVD or by MBE.

The optical and mechanical properties of InGaAs can be varied by changing the ratio of InAs and GaAs, . Most InGaAs devices are grown on indium