platinum film deposited on a silicon substrate. Due to the ease with which PtSi can become contaminated by oxygen, several variations of the methods have been reported. Rapid thermal processing has been shown to increase the purity of PtSi layers formed. Lower temperatures (200-450 °C) were also found to be successful, higher temperatures produce thicker PtSi layers, though temperatures in excess of 950 °C formed PtSi with increased resistivity due to clusters of large PtSi grains.

Kinetics

Despite the synthesis method

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