(SOI) device between two gate electrodes connected together.

The first FinFET transistor type was called a depleted lean-channel transistor (DELTA) transistor, which was first fabricated in Japan by Hitachi Central Research Laboratory's Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto and Eiji Takeda in 1989. The gate of the transistor can cover and electrically contact the semiconductor channel fin on both the top and the sides or only on the sides. The former is called