and Derrick were able to manufacture the first silicon dioxide field effect transistors, the first transistors in which drain and source were adjacent at the surface. At Shockley Semiconductor, Shockley had circulated the preprint of their article in December 1956 to all his senior staff, including Jean Hoerni. Later, Hoerni attended a meeting where Atalla presented a paper about passivation based on the previous results at Bell Labs.

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