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usually is described using the Shichman-Hodges model, accurate only for old technology:where = drain current, =technology parameter sometimes called the transconductance coefficient, W, L = MOSFET width and length, = gate-to-source voltage, = threshold voltage, = drain-to-source voltage, , and ? = channel-length modulation parameter.In the classic Shichman-Hodges model, is a device constant, which reflects the reality of transistors with long channels.

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