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* ?-Ga₂O₃ can be obtained by heating ?-Ga₂O₃ at 65 kbar and 1100 °C. It has a corundum structure. The hydrated form can be prepared by decomposing precipitated and "aged" gallium hydroxide at 500 °C. Epitaxial thin films of ?-Ga₂O₃ deposited on c-plane (0001), m-plane (100), or a-plane (110) sapphire substrates have been demonstrated.
* ?-Ga₂O₃

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